ICE10N60FP n-channel enhancement mode mosfet features: low r ds(on) ultra low gate charge high dv/dt capability high unclamped inductive switching (uis) capability high peak current capability increased transconductance performance optimized design for high performance power systems symbol parameter value unit conditions i d continous drain current 10 a t c = 25c i d , pulse pulsed drain current 30 a t c = 25c e as avalanche energy, single pulse 340 mj i d = 8.3a i ar avalanche current, repetitive 5 a limited by t j max dv/dt mosfet dv/dt ruggedness 50 v/ns v ds = 480v, i d = 10a, t j = 125c v gs gate source voltage 20 v static 30 ac (f>hz) p tot power dissipation 35 w t c = 25c t j , t stg operating and storage temperature -55 to +150 c mounting torque 50 ncm m 2.5 screws maximum ratings @ tj = 25c, unless otherwise specifed product summary i d t a = 25c 10a max v (br)dss i d = 250ua 600v min r ds(on) v gs = 10v 0.28? typ q g v ds = 480v 41nc typ micross components ltd, united kingdom, tel: +44 1603 788967, fax: +44 1603 788920, web: www.micross.com, email: chipcomponents@micross.com 1 thermal characteristics r thjc thermal resistance, junction to case - - 3.5 c/w r thja thermal resistance, junction to ambient - - 80 leaded t sold soldering temperature, wave soldering only al - lowed at leads - - 260 c 1.6mm (0.063in.) from case for 10s pin description: to-220 d g s symbol parameter values unit conditions min typ max electrical characteristics @ tj = 25c, unless otherwise specifed static characteristics v (br)dss drain to source breakdown voltage 600 630 - v v gs = 0v, i d = 250a v gs(th) gate threshold voltage 2.1 3 3.9 v ds = v gs , i d = 250a i dss zero gate voltage drain current - 0.1 1 a v ds = 600v, v gs = 0v, t j = 25c - - 100 v ds = 600v, v gs = 0v, t j = 150c i gss gate source leakage current - - 100 na v gs = 20v, v ds = 0v r ds(on) drain to source on-state resistance - 0.28 0.33 ? v gs = 10v, i d = 5a, t j = 25c - 0.75 - v gs = 10v, i d = 5a, t j = 150c r gs gate resistance - 5 - ? f = 1 mhz, open drain
ICE10N60FP dynamic characteristics c iss input capacitance - 1250 - pf v gs = 0v, v ds = 25v, f = 1 mhz c oss output capacitance - 600 - c rss reverse transfer capacitance - 5 - g fs transconductance - 12 - s v ds = >2* i d * r ds, i d = 5a t d(on) turn-on delay time - 6 - ns v ds = 480v, v gs = 10v, i d = 10a, r g = 4? (external) t r rise time - 3.5 - t d(of ) turn-of delay time - 54 - t f fall time - 7 - symbol parameter values unit conditions min typ max gate charge characteristics q gs gate to source charge - 7.1 - nc v ds = 480v, i d = 10a, v gs = 0 to 10v q gd gate to drain charge - 14.5 - q g gate charge total - 41 - v plateau gate plateau voltage - 5.2 - v reverse diode v sd diode forward voltage - 0.9 1.2 v v gs = 0v, i s = i f t rr reverse recovery time - 332 - ns v rr = 300v, i s = i f , d if /d t = 100 a/s q rr reverse recovery charge - 4.4 - c i rm peak reverse recovery current - 25.6 - a micross components ltd, united kingdom, tel: +44 1603 788967, fax: +44 1603 788920, web: www.micross.com, email: chipcomponents@micross.com 2
output characteristics ICE10N60FP v gs = 10v to 8v transfer characterstics on state resistance vs drain current q g - total gate charge (nc) gate charge on resistance vs junction temperature 7v t j = 150 c 25 c 6v 5v v gs = 10v i d = 5a v gs = 10v v gs - gate to source voltage (v) r ds(on) - on state resistance (m?) i d - drain current (a) i d - drain current (a) r ds(on) - on state resistance (normalized) 200 0.5 10 5 1 10 5 400 1.5 2.0 1.0 15 2 25 20 15 600 2.5 20 3 30 800 700 500 300 3.0 3.5 4.0 30 25 4 5 6 7 8 9 10 0 100 0 0.0 0 0 0 0 -50 0 0 15 20 20 100 75 30 6 10 25 30 150 125 40 50 8 10 15 10 50 25 20 4 5 5 0 -25 10 2 micross components ltd, united kingdom, tel: +44 1603 788967, fax: +44 1603 788920, web: www.micross.com, email: chipcomponents@micross.com 3 v ds = 480v i d = 10a v ds - drain to source voltage (v) i d - drain current (a) t j - junction temperature ( c) v gs - gate to source voltage (v)
drain to source breakdown voltage vs. junction temperature -50 25 50 75 100 125 150 0 -25 ICE10N60FP i d = 1ma v ds - drain to source voltage (v) t j - junction temperature (c) t - time (seconds) maximum rate forward biased safe operating area transient thermal response - junction to case v (br)dss - drain to source breakdown voltage (normalized) r (t) - transit thermal resistance (normalized) i d - drain current (a) single pulse t c = 25c t = 150c v gs = 10v r ds (on) limit package limit thermal limit 0.5 0.2 0.1 10us 100us 1ms 10ms dc 0.05 0.02 single pulse 0.1 0.01 0.9 1.0 1 0.10 1.1 10 100 1.00 1.2 0.01 0.00 0.8 1.0e-06 1.0e-04 1.0e-02 1.0e-00 10 100 1000 1 v ds - drain to source voltage (v) capacitance c - capacitance (pf) crss coss ciss 10000 1000 10 100 100000 1 0 400 600 200 i d = 250ua t j - junction temperature (c) gate threshold voltage vs. junction temperature v gs(th) - gate threshold voltage (normalized) 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 25 50 75 100 125 150 0 -25 micross components ltd, united kingdom, tel: +44 1603 788967, fax: +44 1603 788920, web: www.micross.com, email: chipcomponents@micross.com 4 notes: p dm t 1 t 1 t 2 t 2 duty cycle, d =
|
